High-linearity 250-to-3000-MHz RF and microwave driver amplifier introduced by M/A-Com Tech
Dec. 28, 2010
LOWELL, Mass., 28 Dec. 2010. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAM-009563 two-stage heterojunction bipolar transistor (HBT) driver amplifier for cellular and Limax infrastructure applications. This driver amplifier covers 250 to 3000 MHz with linearity of 47 dBm output IP3 and typical gain of 19.5 dB. Â
LOWELL, Mass., 28 Dec. 2010. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAM-009563 two-stage heterojunction bipolar transistor (HBT)RF and microwave driver amplifier for cellular and Limax infrastructure applications. This driver amplifier covers 250 to 3000 MHz with linearity of 47 dBm output IP3 and typical gain of 19.5 dB.
The broad operation is achieved using external matching components, where component values are selected to center the 200 MHz instantaneous bandwidth within the overall frequency range. The lead-free SOIC-8EP surface mount plastic package is RoHS compliant and compatible with solder reflow temperatures up to 260 degrees Celsius. The ESD susceptibility achieves a class 2 ESD rating.
For more information contact M/A-COM Tech online at www.macomtech.com.
About the Author
John Keller | Editor
John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.
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