GaN HEAT power transistors and power amplifiers for air traffic control and radar introduced by Cree

DURHAM, N.C., 3 June 2011. Cree Inc. in Durham, N.C., is introducing the CGH31240F and CGH35240F gallium nitride (GaN) high-electron mobility transistors (HEMT) and high-power amplifier (HPA) monolithic microwave integrated circuits (MMICs) in the 2.7-3.5 GHz range (S-Band) for air traffic control, weather radar, and homeland defense applications.These RF and microwave devices combine power and efficiency for typical power-added efficiencies of 60 percent, Cree officials say, which can reduce power consumption by as much as 20 percent when compared with existing parts.The devices match internally to 50 ohms and provide saturated RF output power of 240 Watts over 2.7 to 3.1 GHz and 3.1 to 3.5 GHz, respectively, with power gains of more than 11dB. The devices measure 0.9 by 0.68 inches and offer typical power added efficiencies of 60 percent. The devices also demonstrate pulse droop of less than 0.2dB at specified operating conditions when compared to other technologies such as gallium arsenide and silicon, company officials say.

The CMPA2735075F is a two-stage GaN HEAT high power MMIC amplifier providing a saturated RF output power of 75 Watts over 2.7 to 3.5 GHz with a power gain of 20dB in a package measuring 0.5 by 0.5 inches. It offers 60 percent typical PAE with RF pulse widths of 300 microseconds and a 20 percent duty cycle.

For more information contact Cree online at www.cree.com/rf.