Solid-state GaN RF amplifier for electronic warfare and radar offered by Comtech PST
MELVILLE, N.Y., 15 April 2013. Comtech PST Corp. in Melville, N.Y., is introducing the BME69189-20 high-power-density solid-state RF module for electronic warfare, radar transmitters, and communications applications where space, cooling, and power are limited.
The integrated RF gallium nitride (GaN) 6-to-18 GHz RF amplifier for RF and microwave applications has a of more than 20 Watts; gain at 20 Watts of more than 41 decibels; maximum RF input overdrive of 10 dbm; and built-in test that includes composite fault indication, over current, and over voltage.
The RF GaN amplifier has a seven-pin DC control interface; DC input of 28 volts DC; standby power of 35 Watts; DC to RF efficiency of 14 percent; operates in temperatures from -50 to 55 degrees Celsius at the baseplate; and meets MIL-STD-810F for shock and vibration.
The GaN RF amplifier weighs five pounds and measures 6.56 by 3.5 by 0.84 inches.
For more information contact Comtech PST online at www.comtechpst.com.
John Keller | Editor
John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.
