High-power GaN RF amplifier for aerospace and defense applications introduced by Aethercomm
SAN MARCOS, Calif., 15 Sept. 2013. Aethercomm Inc. in San Marcos, Calif., is introducing the SSPA 6.000-18.000-50 high-power super -broadband gallium nitride (GaN) RF amplifier for aerospace and defense applications.
The RF and microwave amplifier operates from 6 to 18 GHz, offers high power over a multi-decade bandwidth with power added efficiency, and operates at a base plate temperature -40 to 55 degrees Celsius.
It is packaged in a modular housing that measures 8.5 by 3.5 by 1.38 inches, and has a typical P3dB of 40 Watts at room temperature with a minimum of 25 Watts.
Noise figure at room temperature is 12 dB typical. This amplifier offers a typical power gain of 47 dB with a typical gain flatness of plus-or-minus 1.0 dB. The power and gain flatness across the band is extremely flat for the bandwidth.
Input VSWR is 2.0:1 maximum. Class AB quiescent current is 8.5 amps typical employing a 26-volt DC supply. This SSPA includes an external DC blanking command that enables and disables the module in less than 20 microseconds.
A logic low or open circuit commands the PA OFF. A logic high commands this amplifier ON. Standard features include over/under voltage protection and reverse polarity protection.
Input and output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector. For more information contact Aethercomm online at www.aethercomm.com.
