Photodiode for extreme stability in detecting ultraviolet photons introduced by Opto Diode

Sept. 27, 2013
NEWBURY PARK, Calif., 27 Sept. 2013. Opto Diode Corp. in Newbury Park, Calif., is introducing the UVG100 photodiode for applications that require extreme stability for the detection of vacuum ultraviolet and extreme ultraviolet photons.

NEWBURY PARK, Calif., 27 Sept. 2013. Opto Diode Corp. in Newbury Park, Calif., is introducing the UVG100 photodiode for applications that require extreme stability for the detection of vacuum ultraviolet and extreme ultraviolet photons.

The photodetector has a 100-square-millimeter active area, and delivers 100 percent internal quantum efficiency (QE). After exposure to megajoules per square centimeter, the UVG100 show less than 2 percent responsivity loss, company officials say.

The product is designed for long-lifetime operation in high-particle flux environments with no loss of responsivity. The new UVG100 absolute photodiode has high radiation hardness, and its proprietary oxynitride front window ensures operation without performance degradation.

Responsivity under test conditions at 254 nanometers, is a minimum of 0.08, typical 0.09, and maximum 0.13 A/W. The rise time at 10 volts is a maximum of 10 microseconds. The shunt resistance at plus or minus 10 millivolts is a minimum of 20 milliohms; the reverse breakdown voltage typically is 10 volts; the capacitance typically is 10 nanofarads with a maximum of 20 nanofarads.

For more information contact Opto Diode online at www.optodiode.com.

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