Broadband GaN amplifier for military radar, radio, and SATCOM introduced by Nitronex
MORRISVILLE, N.C., 27 Dec. 2013. Nitronex LLC in Morrisville, N.C., is introducing the NPA1006 broadband gallium nitride (GaN) amplifier for military communications, radar, satellite communications, point-to-point microwave, broadband, and commercial wireless applications.
The NPA1006 is a 28-volt, 20 MHz to 1 GHz, 15 Watt RF and microwave amplifier with 14dB gain and 60 percent drain efficiency. It is housed in an industry-standard 6-by-5-millimeter DFN plastic package.
The thermal resistance of the NPA1006 is 4.6-degreeC/W, representing for this power level. The amplifier input is internally matched to 50 Ohms for integration; the output needs a two-element external match for full band coverage.
The NPA1006 uses Nitronex's 28-volt NRF1 GaN HEMT process. Nitronex's patented SIGANTIC GaN-on-Si process uses an industry standard 4-inch silicon substrate.
For more information contact Nitronex online at www.nitronex.com.
