Photodiode for stability after extreme ultraviolet conditions introduced by Opto Diode
NEWBURY PARK, Calif., 12 Sept. 2014. Opto Diode in Newbury Park, Calif., is introducing the SXUV 2.5-millimeter photodiode with a circular active area that provides stability after extreme ultraviolet conditions.
The electro-optical device is housed in a TO-39, 3-pin, windowless package that delivers responsivity down to 1 nanometer. The active area is typically 2.5-millimeter and has a minimum shunt resistance (Rsh) of 20 MOhms at plus-or-minus 10 mV (typical).
The photodiode is suited forhigh power laser monitoring at wavelengths 1nm -- 200nm, or other tasks that require a stable photodiode after EUV exposure.
The device parameters include reverse breakdown voltage of 20 Volts, with the capacitance of 1 nanofarads (nF). The response time is 1 nanosecond (typical) to a maximum of 2 nanoseconds.
Storage and operating temperatures range from -10 degrees 40 Celsius, and from -20 to 80 C in nitrogen or vacuum conditions. The lead soldering temperature (0.08 inches from the case for 10 seconds) is 260 C; the maximum junction temperature is 70 C.
For more information contact Opto Diode online at http://optodiode.com.
John Keller | Editor
John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.
