EL SEGUNDO, Calif. – Integra Technologies Inc. in El Segundo, Calif., is introducing the IGN1011L120 IFF transistor for electronic warfare (EW), radar, avionics, defense, communications, and intelligence, surveillance, and monitoring (ISM) applications.
The transistor offers 120 Watts peak output power using gallium nitride (GaN) and silicon carbide (SiC) technology.
Designed for identification friend-or-foe (IFF) avionics applications, the IGN1011L120 is a high-power GaN transistor, specified for use under Class AB operation.
This transistor operates at 1.03 - 1.09 GHz, and supplies a minimum of 120 Watts of peak pulse power, at 50 volts bias voltage and 6.4 percent duty factor.
Assembled via chip-and-wire technology using gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
This 100 percent high power RF and microwave tested transistor for new designs has 17dB of gain and a drain efficiency of 75 percent at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4 percent duty cycle.
For more information contact Integra Technologies online at www.integratech.com.
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