BURLINGTON, Vt., - Raytheon Technologies and GLOBALFOUNDRIE (GF) will collaborate to develop and commercialize a new gallium nitride on silicon (GaN-on-Si) semiconductor that will enable improved radio frequency performance for 5G and 6G mobile and wireless infrastructure applications.
Under the agreement, Raytheon Technologies will license its proprietary gallium nitride on silicon technology and technical expertise to GF, which will develop the new semiconductor at its Fab 9 facility in Burlington, Vermont. Gallium nitride is a unique material used to build high-performance semiconductors that can handle significant heat and power levels. This makes it ideal to handle 5G and 6G wireless signals, which require higher performance levels than legacy wireless systems.
Combined with GF's manufacturing excellence and differentiated services in RF, testing, and packaging, the new GaN offering will increase RF performance while maintaining production and operational costs, enabling customers to achieve new levels of power and power-added efficiency to meet evolving 5G and 6G RF millimeter-wave operating frequency standards.
This collaboration with Raytheon Technologies is the latest of several strategic partnerships for GF and is further evidence of the company's commitment to redefine the leading-edge by delivering differentiated solutions, while the rest of the industry continues to pursue traditional and increasingly difficult technology scaling.
