Heterojunction bipolar transistor driver for wireless communications introduced by M/A-COM Tech
Jan. 5, 2011
LOWELL, Mass., 5 Jan. 2011. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAM-009560 heterojunction bipolar transistor (HBT) driver amplifier for cellular and WiMAX infrastructure applications. This driver amplifier covers a frequency range of 250 to 4000 MHz with linearity of 42 dBm OIP3 over a greater than 20 dB input power range.Â
LOWELL, Mass., 5 Jan. 2011. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAM-009560 heterojunction bipolar transistor (HBT) driver amplifier for cellular, WiMAX, and other wireless communications infrastructure applications. This driver amplifier covers a frequency range of 250 to 4000 MHz with linearity of 42 dBm OIP3 over a greater than 20 dB input power range.
The device also features a typical gain of 15 dB. The lead-free SOT-89 surface-mount plastic package is RoHS compliant and compatible with solder reflow temperatures up to 260 degrees Celsius. The electro-static discharge susceptibility achieves a class 2 ESD rating.
For more information contact M/A-COM Tech online at www.macomtech.com.
About the Author
John Keller | Editor
John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.
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