BAE Systems eyes developing RF analog and digital integrated circuit for wideband information processing
NASHUA, N.H. – Microelectronics experts at BAE Systems are moving forward on a project to develop integrated radio frequency (RF) electronics with wide spectral coverage, high resolution, large dynamic range, and wideband information processing.
Officials of the U.S. Defense Advanced Research Projects Agency (DARPA in Arlington, Va., have awarded a $5 million contract to the BAE Systems Electronic Systems segment in Nashua, N.H., to start the second phase of the Technologies for Mixed-mode Ultra Scaled Integrated Circuits (T-MUSIC) program.
The second phase will refine enabling technologies for RF mixed-mode technologies by integrating RF analog electronics with digital electronics on the same wafer for future military communications, radar, and electronic warfare (EW) applications.
T-MUSIC technology could enable wide spectral coverage, high resolution, large dynamic range, and high information processing bandwidth. These capabilities can cut through electronic signal clutter.
T-MUSIC, which is part of the DARPA Electronics Resurgence Initiative (ERI), is exploring the integration of mixed-mode RF analog and digital electronics into advanced onshore semiconductor manufacturing processes, and seeks to establish a domestic manufacturing capability for high-performance RF mixed-mode systems on chip (SOC).
In addition to BAE Systems, the first phase of the T-MUSIC project involved four other research teams led by Raytheon Technologies Corp.; University of California-Los Angeles; University of California-San Diego; and University of Utah.
Related: L3Harris to develop jam-resistant radio communications
The five circuit design teams worked close with two foundry partners selected to support the development of advanced mixed-mode technologies in U.S. onshore CMOS foundries. The foundry partners are Global Foundries in Santa Clara, Calif., and Tower Semiconductor in Migdal HaEmek, Israel.
A third group of researchers have explored foundational breakthroughs in ultra-broadband transistors, pushing well beyond current near-term advances in foundry technology. Research teams from the University of California-Los Angeles and University of California-Berkeley looked at new types of RF mixed-mode transistors to demonstrate transistor-switching speed to 1 GHz in scalable CMOS.
On the T-MUSIC phase-two contract, BAE Systems will do the work in Merrimack, N.H.; Lexington, Mass.; and Manassas, Va. For more information contact BAE Systems Electronic Systems online at www.baesystems.com.
