RoHS compliant MOSFET Power IC components for hot-swap applications offered by IR
Aug. 9, 2009
EL SEGUNDO, Calif., 9 Aug. 2009. Power electronics specialist International Rectifier (IRF) in El Segundo, Calif., is introducing the IRF6718 DirectFET MOSFET that offers low on-state resistance (RDS(on)) for DC switch applications such as active O-ring, hot swap, and electronic fuse (E-fuse) power electronics applications.
EL SEGUNDO, Calif., 9 Aug. 2009.Power electronics specialist International Rectifier (IRF) in El Segundo, Calif., is introducing the IRF6718 DirectFET MOSFET that offers low on-state resistance (RDS(on)) for DC switch applications such as active O-ring, hot swap, and electronic fuse (E-fuse) power electronics applications.
The IRF6718 power management device features silicon technology in a large can DirectFET package to deliver an low RDS(on) of 0.5mOhm (typical) at 10V Vgs in a 60 percent smaller footprint and 85 percent lower profile than a D2PAK.
These power components reduces conduction losses associated with the pass element to improve the electronic power management efficiency of the entire system. In addition, the IRF6718 power IC provides an improved safe operating area (SOA) capability for E-fuse and hot swap circuits in military power applications. The power ICs are lead free and RoHS compliant.
The IRF6718 is an expansion of IR's 25V DirectFET family targeting DC switch applications. The IRF6717 medium can and IRF6713 small can DirectFETs also target DC switch applications and provide industry best RDS(on) within their respective PCB footprints.
For more information contact International Rectifier online at www.irf.com.
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