NXP opens high-performance RF product creation center in US

Posted by Courtney E. Howard

SAN JOSE, Calif., 28 June 2010. NXP Semiconductors has opened a high-performance, radio-frequency (RF) product creation center (PCC) in Billerica, Mass. This new NXP facility, located near Boston, will focus on the design of RF and microwave integrated circuits (ICs) used in demanding applications, such as defense and aerospace, industrial, scientific, and medical satellite receivers and broadband communications.

With its East Coast location, and close proximity to design teams in France and the Netherlands, the center will strengthen the technical and application support provided to the company’s Americas-based customers.

NXP’s broad RF portfolio spans high-power LDMOS for power amplifiers to the latest SiGe:C BiCMOS for RF/IF MMICs (monolithic microwave integrated circuits). Advanced CMOS process for high-speed converters completes the RF front-end. As all these technologies are designed and manufactured in-house, they are custom-tuned to application-specific requirements.

“The deep pool of experienced and talented RF designers, the active RF customer base, and the closeness to Europe make Boston the ideal location for the new NXP PCC,’ says Ian Gresham, general manager Boston PCC, NXP Semiconductors. “The PCC team will endeavor to push the limits of our high-performance RF and microwave products overcoming market challenges through innovation.”