Gallium nitride (GaN) pulsed laser diode module for uncooled optical metrology introduced by OSI Laser Diode

EDISON, N.J. – OSI Laser Diode Inc. in Edison, N.J., is introducing the CVB 450-TO56R 450-nanometer pulsed laser diode module for demanding metrology applications like uncooled optical metrology tasks where pulsed optical power is required.

The electro-optical module includes an electrostatic discharge (ESD) protection device, and is packaged in a 3-pin coaxial format. The gallium nitride (GaN) laser diode module is optically coupled to a 200/230/500-micron fiber pigtail.

The CVB 450-TO56R pulsed laser diode is efficient, RoHS compliant, and has a compact, fiber-coupled coaxial package with high-peak power in a flexible format.

OSI's blue laser diode module features peak optical power at a minimum of 2 Watts, an absolute maximum forward current at 2500 milliamps, with a typical threshold current of 300 milliamps.

The center wavelength typically is 450 nanometers with a 440-nanometer minimum and 460-nanometer maximum spectral range. The device has a spectral width of 1 nanometer, and operates in temperatures from -40 to 85 degrees Celsius for metrology applications.

For more information contact OSI Laser Diode online at www.laserdiode.com.