Scientists at Ibis Technology Corp. in Danvers, Mass., are looking into reducing leakage in separation by implantation of oxygen/silicon-on-insulator (SIMOX-SOI) wafers. Toward this goal, Ibis specialists are considering thinner buried oxide layers, non-destructive testing of SIMOX-SOI wafers for certain quality parameters, and radiation-hardened testing of specially processed SIMOX-SOI substrates. They are working under several research contracts from the U.S. Air Force, National Aeronautics an
Scientists at Ibis Technology Corp. in Danvers, Mass., are looking into reducing leakage in separation by implantation of oxygen/silicon-on-insulator (SIMOX-SOI) wafers. Toward this goal, Ibis specialists are considering thinner buried oxide layers, non-destructive testing of SIMOX-SOI wafers for certain quality parameters, and radiation-hardened testing of specially processed SIMOX-SOI substrates. They are working under several research contracts from the U.S. Air Force, National Aeronautics and Space Administration, and Defense Special Weapons Agency. - J.K.
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