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    Near-infrared high-power light-emitting diode array for night vision introduced by Opto Diode

    July 8, 2010
    NEWBURY PARK, Calif., 8 July 2010. Opto Diode Corp. in Newbury Park, Calif., is introducing the OD-850-30-030 30-die near-infrared (NIR) high-power light-emitting diode (LED) array for night vision systems and skin therapy applications. The device has a peak wavelength of 850 nanometers, a total optical power output of 16 Watts, and delivers efficient operation and high power with a beam angle of 30 degrees. 
    Pennwell web 120 90

    NEWBURY PARK, Calif., 8 July 2010. Opto Diode Corp. in Newbury Park, Calif., is introducing the OD-850-30-030 30-die near-infrared (NIR) high-power light-emitting diode (LED) array for night vision systems and skin therapy applications.

    The device has a peak wavelength of 850 nanometers, a total optical power output of 16 Watts, and a beam angle of 30 degrees.

    Thermal parameters for storage range from -40 degrees C to 125 degrees C, with the operating temperature range from -20 degrees C to 100 degrees C. The maximum junction temperature is 125 degrees C with a thermal resistance, junction to case, of 0.8 degrees C per Watt.

    For more information contact Opto Diode online at www.optodiode.com.

    About the Author

    John Keller | Editor

    John Keller is editor-in-chief of Military & Aerospace Electronics magazine, which provides extensive coverage and analysis of enabling electronic and optoelectronic technologies in military, space, and commercial aviation applications. A member of the Military & Aerospace Electronics staff since the magazine's founding in 1989, Mr. Keller took over as chief editor in 1995.

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