GaN HEMT for high-reliability military and space power electronics applications introduced by Teledyne

MILPITAS, Calif. – The Teledyne Defense Electronics Teledyne e2v HiRel segment in Milpitas, Calif., is introduced the TDG100E90 ruggedized 100-volt/90-amp gallium nitride (GaN) power high-electron mobility transistor (HEMT) for high-reliability military and space power electronics applications.

The TDG100E90 is available with a bottom-cooled package, and is available to provide a lower step-down voltage in high reliability power circuitry.

The device meets requirements of sulfuric test, high-altitude simulation, dynamic burn-in, step stress to 175-degree-Celsius ambient, testing at 9-volt gate voltage, and full temperature testing.

Compared to Silicon MOSFET devices, the TDG100E90 GaN HEMT reduces losses and EMI, due to no reverse recocharacteristics. To reduce drain-source on resistance (RDS(on)) or increase the load current, the TDG100E90 can support parallel driving configuration.

The use of high-performance GaNPX packaging allows high frequency switching, low inductance, and thermal characteristics, enabling customers to reduce the size and weight of power electronics.

For more information contact Teledyne e2v HiRel online at www.tdehirel.com.