Silicon carbide 1200-volt 50-amp power electronics modules for avionics applications introduced by Solitron
WEST PALM BEACH, Fla. – Solitron Devices Inc. in West Palm Beach, Fla., is introducing the SD11900 series 1200-volt 50-amp power electronics modules for demanding applications like avionics-based electromechanical actuators and power converters.
The SD11900 has a 37-by 25-millimeter outline, and makes the most of power density while minimizing loop inductance with a pin configuration to allow simple power busing.
The SD11902/3/4/5 are half-bridge configurations with two 1200-volt 32-milliohm silicon carbide (SiC) metal oxide silicon field effect transistors (MOSFETs). The SD11902 and SD11904 feature freewheeling 1200-volt silicon carbide Schottky diodes in parallel with the MOSFETs inside the module. Continuous drain current is specified at 50-amp.
The SD11900 series operates in temperatures from -55 to 175 degrees Celsius. Its construction includes copper baseplates and alumina nitride insulators ensuring TCE matching and high thermal transfer. Isolated integrated temperature sensing enables high temperature protection.
Silicon carbide provides excellent power electronics switching performance versus silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) with minimal variation versus temperature.
Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase.
Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size. Additions to the series which include enhanced performance, alternative pin outs and higher levels of integration are targeted for release later this year.
For more information contact Solitron Devices online at https://solitrondevices.com.
