Silicon-carbide (SiC) MOSFETs for industrial power electronics applications introduced by STMicroelectronics

GENEVA – Engineers at STMicroelectronics in Geneva are introducing the company's third generation of STPOWER silicon-carbide (SiC) metal oxide silicon field effect transistors (MOSFETs) for power electronics applications in electric-vehicle (EV) powertrains and industrial applications that require power density, energy efficiency, and reliability.

STMicro has found ways to open up more of SiC's energy-saving potential. Car makers and automotive suppliers are embracing 800-volt drive systems to achieve much faster charging and help reduce EV weight. These new systems enable car makers to produce vehicles with longer driving ranges.

Among the first products available is the 650-volt SCT040H65G3AG. STMicro's new SiC MOSFETs are for these high-end automotive applications including EV traction inverters, on-board chargers, DC-DC converters, and e-climate compressors.

STMicro has completed qualification of the third-generation SiC technology platform and expected to move most of the derivative power electronics products to commercial maturity by the end of 2021.

Devices with nominal voltage ratings from 650 and 750 volts to 1200 volts will be available. For more information contact STMicroelectronics online at www.st.com.