Silicon carbide (SiC) IGBT gate driver power devices for system reliability introduced by Power Integrations
SAN JOSE, Calif. – Power Integrations in San Jose, Calif., is introducing the SCALE-iFlex LT NTC family of silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) power devices for systems with several modules arrayed in parallel to ensure proper current sharing and enhance overall system reliability.
The gate drivers target the popular dual 100-by-140-millimeter style of IGBT modules, such as the Mitsubishi LV100 and the Infineon XHP 2, as well as SiC variants with as much as 2300 volts blocking voltage.
The SCALE-iFlex LT NTC drivers provide negative temperature coefficient (NTC) data -- an isolated temperature measurement of the power module -- which enables thermal management of converter systems.
Based on the Power Integrations SCALE-2 technology, SCALE-iFlex LT power electronics devices improve current sharing accuracy and increase the current-carrying capability of several-paralleled modules by 20 percent, to enable users to increase semiconductor use of their converter stacks.
This is possible because the localized control of each 2SMLT0220D Module Adapted Gate (MAG) driver ensures precise control and switching to enable current sharing. Advanced active clamping (AAC) delivers overvoltage protection.
To further increase space saving, as many as four MAG-driven power modules can connect in parallel from one 2SILT1200T isolated master control (IMC) unit, which also can mount on a power module due to its compact outline.
The gate drivers are qualified to IEC 61000-4-x (EMI), IEC-60068-2-x (environmental), and IEC-60068-2-x (mechanical) specifications, and undergo type testing -- low voltage, high voltage, thermal cycling -- to shorten designer development time by 12 to 18 months. Protection features are included, and parts optionally are available with conformal coating.
For more information contact Power Integrations online at www.power.com/products/scale-iflex/scale-iflex-lt-ntc.
