Rugged SJ MOSFET for power electronics with protection from electrostatic discharge offered by Magnachip

Nov. 30, 2023
The MMD60R175S6ZRH SJ MOSFET power device offers microfabrication technology, and was built on the 180-nanometer microfabrication process.

CHEONGJU-SI, South Korea – Magnachip Semiconductor Corp. in Cheongju-si, South Korea, is introducing the MMD60R175S6ZRH 600V super junction metal oxide semiconductor field effect transistor (SJ MOSFET) for computer servers, OLED TVs, and laptop computer fast chargers.

The MMD60R175S6ZRH power electronics device is enhanced with microfabrication technology, and was built on the 180-nanometer microfabrication process by narrowing the cell-pitches by 50 percent and lowering the RDS(on) by 42 percent.

The total gate charge is lowered by about 29 percent compared to the previous generation, resulting in reduced switching loss and enhanced power efficiency. A Zener diode is embedded between the gate and the source to strengthen the reliability of the MOSFET against damage from surges or electrostatic discharge.

For more information contact Magnachip Semiconductor online at www.magnachip.com.

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