Gallium-nitride (GaN) power bridge devices for applications as strong as 500 Watts introduced by STMicro
GENEVA – STMicroelectronics in Geneva, Switzerland, is introducing the MasterGaN1L and MasterGaN4L next generation of integrated gallium-nitride (GaN) bridge devices for power electronics applications as strong as 500 Watts.
The MasterGaN1L and MasterGaN4L can simplify power-supply design leveraging wide-bandgap technology to achieve the latest ecodesign targets.
The MasterGaN family of bridge devices combines 650-volt GaN high electron-mobility transistors (HEMT) with optimized gate drivers, system protection, and an integrated bootstrap diode that helps power the device at startup.
Integrating these features saves designers from tackling the complex gate-drive requirements of GaN transistors. Housed in a compact power package, the devices also enhance reliability, cut the bill of materials, and ease circuit layout.
The latest devices contain two GaN HEMTs connected in half-bridge configuration. The arrangement is suitable for building switched-mode power supplies, adapters, and chargers with active-clamp flyback, active-clamp forward, and resonant converter topologies.
The MasterGaN1L and MasterGaN4L are pin-compatible with MasterGaN1 and MasterGaN4 respectively. Compared to the earlier devices, they have an optimized turn-on delay for working at high frequency and high efficiency with low load, especially in resonant topologies.
Related: Lightweight Three Phase Power Bridge Modules, SPM1xxx Series
The inputs accept signal voltages from 3.3 to 15 volts, with hysteresis and pull-down that facilitate connecting to a controlling device such as a microcontroller, DSP, or Hall-effect sensors.
A dedicated shutdown pin helps designers save system power and the two GaN HEMTs have accurately matched timing with an interlocking circuit to prevent cross-conduction conditions.
For more information contact STMicroelectronics online at www.st.com/en/power-management/mastergan1l.html.
