P-channel enhancement-mode power MOSFET for load switching offered by Advanced Power
Oct. 3, 2013
SAN JOSE, Calif., 3 Oct. 2013. Advanced Power Electronics Corp. USA in San Jose, Calif., is introducing the AP2325GEU6-HF-3 P-channel enhancement-mode power metal oxide silicon field-effect transistor (MOSFET) for applications such as load switches.
Posted by John Keller
SAN JOSE, Calif., 3 Oct. 2013. Advanced Power Electronics Corp. USA in San Jose, Calif., is introducing the AP2325GEU6-HF-3 P-channel enhancement-mode power metal oxide silicon field-effect transistor (MOSFET) for applications such as load switches.
Combining fast switching, low on-resistance, and cost-effectiveness, the AP2325GEU6-HF-3 has a low gate charge, and a minimum drain-source breakdown voltage (BVDSS) of -20 volts, maximum RDS(ON) of 145 milliohms, and a maximum continuous drain current (ID) at 25 degrees Celsius of -1.8 amps.
The Advanced Power MOSFETs are available in the RoHS/REACH-compliant, halogen-free SOT-363 ultra-small surface-mount package which is used in commercial and industrial applications where a small board footprint is required, company officials say.
For more information contact Advance Power Electronics online at www.a-powerusa.com.
