International Rectifier introduces family of radiation-hardened MOSFETs

EL SEGUNDO, Calif., 4 June 2008.International Rectifier in El Segundo, Calif., is offering a family of radiation-hardened logic level gate drive metal oxide silicon field effect transistors (MOSFETs) in 60-, 100-, and 250-volt versions for switch mode power supplies, satellite power distribution systems, and resonant power converters in high-reliability applications.

The extended family of MOSFETs includes N and P channel in single and multi-chip configurations offered in through-hole and surface-mount packages including
SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, Low-Ohmic TO-257AA, and
MO-036AB. The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.

For more information contact International Rectifier online at www.irf.com.