Red and near-infrared (NIR) photodiode for electro-optics applications introduced by Opto Diode
CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the NXIR-RF100C red and near-infrared (NIR) enhanced, reduced-footprint, surface-mount device (SMD) photodiode for a wide variety of electro-optics applications.
The photo detector has spectral response from 320 to 1100 nanometers and can be used for laser-monitoring, rain, and sun-sensor applications. The rugged package is designed for environments requiring extended temperature range from -40 to 125 degrees Celsius.
The device has an anti-reflective (AR) coated window that provides greater than 98 percent transmission. The SMD expands the company's high-performance, through-hole photodiode packages, enabling designers to reduce space and cost.
The NXIR-RF100C has an active area of 1 square millimeter in a small 3-millimeter-by-3.5-millimeter surface-mount package. The device has high responsivity of 0.62 A/W @ 850 nanometers and 0.35 A/W @ 1064 nanometers.
It also has low capacitance of 3 pico-farads (pF) at 0 volts, high shunt resistance, greater than 200 M?, and low dark current at 0.1nA. Opto Diode's NXIR-RF100C detectors are available in high volume on tape and reel.
For more information contact Opto Diode online at http://optodiode.com.
Learn more: search the Aerospace & Defense Buyer's Guide for companies, new products, press releases, and videos
