MUNICH – Infineon Technologies AG in Munich is introducing the 600 V CoolMOS 8 high-voltage superjunction MOSFET family for server and industrial switched-mode power supplies, electric vehicle chargers, and micro-solar applications.
The superjunction MOSFETs enable Si-based solutions, and are equipped with an integrated fast body diode. The components come in SMD QDPAK, TOLL and ThinTOLL 8 x 8 packages.
At 10 volts, the 600-volt CoolMOS 8 superjunction MOSFETs offer 18 percent lower gate charge than the CFD7 and 33 percent lower than the P7. At 400 volts, MOSFETs offer a 50 percent lower output capacitance C OSS than the CFD7 and the P7.
The turn-off losses have been reduced by 12 percent compared to the CFD7 and the P7 and the reverse recovery charge is 3 percent lower compared to the CFD7.
Features of these high-voltage MOSFETs offer high efficiency and reliability in soft-switching topologies such as LLC and ZVS phase-shift full-bridge. They also provide performance levels in PFC, TTF, and other hard-switching topologies.
For more information contact Infineon online at www.infineon.com/coolmos8.
