RDS(on) power ICs for high-power uses like industrial power supplies offered by Cambridge GaN Devices
CAMBRIDGE, England – Cambridge GaN Devices (CGD) in Cambridge, England, is introducing low on-resistance drain-source on resistance (RDS(on)) power electronics parts for metal-oxide-semiconductor field-effect transistors (MOSFETs).
These RDS(on) power electronics devices come with die and packages for high-power applications like data centers, inverters, motor drives, and other industrial power supplies. ICeGaN P2 series ICs feature RDS(on) levels to 25 milliohms, supporting multi-kilowatt power levels with high efficiency.
Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0-volt turnoff to minimize reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other incumbent technologies.
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The packages offer thermal resistance performance as low as 0.28 kelvins per Watt, and the dual-gate pinout of the dual side Dual Heat-spreader DFN 9-1 package facilitates circuit board layout and simple paralleling for scalability. The packages are engineered with wettable flanks to simplify optical inspection.
P2 Series ICeGaN power ICs comprise four devices with RDS(on) levels of 25 milliohms and 55 milliohms, rated at 60 amps and 27 amps, in 10-by-10-millimeter footprint DHDFN-9-1 and BHDFN-9-1 packages. The P2 series can be driven using any standard MOSFET or IGBT driver.
Two demo boards feature the P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3-kilowatt totem-pole power factor correction demo board.
For more information contact Cambridge GaN Devices online at https://camgandevices.com/en/.
