Gallium nitride (GaN) transistor devices with robust thermal cycling introduced by Infineon Technologies
MUNICH – Infineon Technologies AG in Munich is introducing the high-performance gallium nitride (GaN) CoolGaN G3 Transistor 100 V in RQFN 5x6 package (IGD015S10S1) and 80 V in RQFN 3.3x3.3 package (IGE033S08S1).
The devices are compatible with industry-standard silicon metal oxide silicon field-effect transistor (MOSFET) packages in a standardized footprint for easy handling and fast time-to-market, company officials say.
The CoolGaN G3 100 V Transistor devices will be available in a 5x6 RQFN package with a typical on-resistance of 1.1 mO. Additionally, the 80 V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3 mO.
Low-resistance connection
These transistors offer a footprint that enables easy multi-sourcing and complementary layouts to silicon-based designs. The packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high performance transistor output in a familiar footprint.
This device offers robust thermal cycling, in addition to improved thermal conductivity, as its large exposed surface area and high copper density helps distribute and dissipate heat.
For more information contact Infineon online at www.infineon.com.
