CHELMSFORD, Mass. – Custom MMIC in Chelmsford, Mass., is introducing the CMD241P4 packaged version of its CMD241 ultra-wideband gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) distributed low noise RF amplifier for use in L-, S-, C-, X-, Ku-, and K-band wideband radar, broadband microwave/millimeter wave communications, SATCOM, and test and measurement instrumentation RF and microwave applications.
The CMD241P4 exhibits gain greater than 13 dB with a low noise figure of 2.3 dB. The gain and noise figure of this distributed amplifier are stable over temperature, from -55 to 85 degrees Celsius.
The CMD241P4 demonstrates a 1 dB compression point beyond +21 dBm at 11 GHz and an output IP3 of +28 dBm, operating off a positive 3-to-8-volt power supply, with a current draw of 74 mA. The input return loss is typically 13 dB, and output return loss of 15 dB.
The distributed amplifier comes in a lead-free RoHs compliant 4x4 QFN plastic package. Also incorporated into the design of this MMIC is a 50 Ohm matched impedance at the input and output ports, which removes the need for both external DC blocks and RF matching.
For more information contact Custom MMIC online at www.custommmic.com.
Learn more: search the Aerospace & Defense Buyer's Guide for companies, new products, press releases, and videos
