Ultraviolet-enhanced photodiode for high-energy detection electro-optical uses introduced by Opto Diode
CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the UVG5S ultraviolet-enhanced photodiode with a 5-square-millimeter circular active area for laser power monitoring tasks and other high-energy detection applications.
The photodiode offers detection between 225 and 400 nanometers, and features less than 2 percent response degradation after exposure to 7,000 joules per square centimeter at 254 nanometers.
With 100 percent internal quantum efficiency from 200 to 365 nanometers, the UVG5S photodiode is packaged with a welded cap that includes a ultraviolet glass window.
Related: Photodiodes for laser power monitoring and metrology introduced by Opto Diode
Electro-optical characteristics include responsivity at 0.09 units of amperes per Watt (A/W) (minimum) to 0.115 A/W (typical) and dark current of 1 nA.
The reverse breakdown voltage ranges from 25 volts (minimum) to 50 volts (typical), and capacitance is 500 picofarads (minimum) to 1500 picofarads (maximum). Response time for this electro-optical device is 1 microsecond (minimum) to 2 microseconds (maximum). The storage temperature ranges from -20 to 80 degrees Celsius and the lead soldering temperature is 240 C.
For more information contact Opto Diode online at www.optodiode.com.
