Near-infrared LED illuminator for surveillance and night-vision applications introduced by Opto Diode

CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the OD-663-850 gallium aluminum arsenide (GaAlAs) near-infrared LED illuminator with ultra-high-power output for surveillance and night-vision applications.

The device has a uniform optical beam with a peak emission wavelength of 850 nanometers.

Other features include total power output from a minimum of 300 milliwatts to a typical output of 425 milliwatts, with typical forward voltage from 4.8 volts to a maximum of 5.4 volts.

The spectral bandwidth is 40 nanometers with a half-intensity beam angle of 120 degrees for surveillance and night-vision uses. Reverse breakdown voltage ranges from a minimum of 5 volts to a typical rating of 30 volts; rise and fall times are 100 nanoseconds, respectively.

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Housed in a standard, a two-lead TO-66 electrically-isolated package, the OD-663-850 is for high-power near-infrared illumination tasks. With power dissipation at 2.2 Watts, the device features a continuous forward current of 400 milliamps, peak forward current of 1 amp, and reverse voltage of 5 volts.

The lead soldering temperature 1/16 of an inch from the case for 10 seconds is 260 degrees Celsius. Storage and operating temperatures range from 40 to 100 C with a maximum junction temperature of 100 C.

For more information contact Opto Diode online at https://optodiode.com.