GaN-on-SiC RF and microwave power amplifier for L-band Mode S avionics introduced by Integra
EL SEGUNDO, Calif. – Integra Technologies Inc. in El Segundo, Calif., is introducing the IGNP1011L2400 RF and microwave power amplifier module/pallet for size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionics systems.
The IGNP1011L2400 is a high-power gallium nitride (GaN)-on-silicon carbide (SiC) that is for identification-friend-or-foe (IFF) and secondary surveillance radar (SSR) avionics systems operating under either Mode S extended-length messages (ELM) or standard Mode S pulse conditions.
The power amplifier supplies a minimum of 2200 Watts of peak output power, with typically less than 16 dB of gain and 57 percent efficiency and operates from a 50-volt supply voltage. This RF power amplifier module/pallet is matched to 50-ohms at input and output and is suitable for 1030 and 1090 MHz.
For more information contact Integra Technologies online at www.integratech.com.
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