GaN-SiC high-power amplifier for SATCOM downlink RF and microwave applications introduced by Arralis
CASTLETROY, Ireland – Arralis Ltd. in Castletroy, Ireland, is introducing the Leonis series gallium nitride-silicon carbide (GaN-SiC) high-power amplifier optimized for satellite communications (SATCOM) downlink systems.
Applications include 5G communications, airborne high-speed Wi-Fi, low-Earth orbit mega constellation communications, drone constellations and SAT-Drone-Ground data networks, satellite-to-automotive connectivity, connected vehicles, last mile and remote internet solutions, IoT, and M2M communications.
The amplifier operates in K-band from 17.5 to 20 GHz and delivers a saturated power in excess of 10 Watts with typical power added efficiency of 25 percent and large signal gain of 20 dB in a die size of 3.6 by 2.9 millimeters.
The GaN-SiC part is matched to 50 Ohms with integrated DC-blocking capacitors on RF ports and incorporates an output power detector to assist with system integration. Nominal drain bias is 25 volts.
The amplifier is fabricated on ITAR-free, space-qualified UMS 0.25-micron GH25-10 GaN-SiC process. GaN devices have higher efficiencies, power density, and thermal conductivity compared to equivalent gallium arsenide parts, and can operate at higher temperatures without loss of reliability.
Optim-micro performance has been achieved at K-band through a combination of UMS device models, NI AWR EDA software and the SATCOM design expertise of the Arralis MMIC team.
Arralis developed the Leonis chipset to meet growing demand for low-cost K/Ka band satellite equipment that is simple to interface with current digital internet hardware.
The part is available as a bare die MMIC or in a pre-assembled evaluation board. For more information contact Arralis online at https://arralis.com.
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