GaN FETs for power electronics in aerospace and defense robotics and automation introduced by SSDI
LA MIRADA, Calif. – Solid State Devices Inc. (SSDI) in La Mirada, Calif., is introducing the SGF46E70 family of hermetic high-voltage gallium nitride (GaN) power field-effect transistors (FETs) for aerospace and defense applications.
SSDI's high voltage GaN Power FETs are for high-efficiency DC-DC, PoL converters, motor controllers, robotics, and automation.
The 46-amp 700-volt power electronics devices are available in a TO-254 through-hole package option, and a SMD1 surface-mount option. The SGF15E100 is a 15-amp 1000-volt GaN FET in the TO-257 package. Both of these families are cascode devices combining a GaN high-electron mobility transistor (HEMT) and a low-voltage silicon metal-oxide-semiconductor field-effect transistor (MOSFET) driver.
GaN products are known for their improved figure of merit (RDS(ON) x QG), which leads to faster switching speeds compared to traditional silicon MOSFETs.
While low voltage, non-hermetic GaN devices are widely available for commercial applications, SSDI specializes in hermetic solutions for high power, high voltage aerospace and defense applications.
For more information contact Solid State Devices online at www.ssdi-power.com.
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