Radiation-hardened asynchronous static random-access memory (SRAM) chips for space introduced by Infineon

Jan. 9, 2024
Rad-hard SRAMs are designed with Infineon’s RADSTOP technology, which is rad hard through proprietary design and process hardening techniques.

MUNICH – Infineon Technologies AG in Munich is introducing radiation-hardened asynchronous static random-access memory (SRAM) chips for use in space and other harsh environment applications where high reliability and performance are critical.

These rad-hard SRAMs are designed with Infineon’s RADSTOP technology, which is rad hard through proprietary design and process hardening techniques.

The rad hard memories are QML-V certified, and feature access times down to 10 nanoseconds. These rad-hard memory chips address high-performance computing requirements in space applications.

Data buffering in space computing can require more memory than the on-chip memory of an MCU or FPGA can provide. Infineon’s rad hard SRAMs are available in 8-, 16- and 32-bit wide configurations and offer embedded error correction code (ECC) for single-bit error correction.

For more information contact Infineon online at www.infineon.com/hirelmemory.

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