100-volt GaN FETs for power uses in robotics and high-density computing introduced by Efficient Power

EL SEGUNDO, Calif. – Efficient Power Conversion Corp. (EPC) in El Segundo, Calif., is introducing the 100-volt EPC2306 off-the-shelf gallium nitride (GaN) field-effect transistors (FETs) in thermally enhanced QFN packages for high-density computing applications.

The 100-volt EPC2306 is for 48-volt DC-DC conversion, also is for 48-volt brushless DC motor drives for e-mobility and robotics in solar optimizers and microinverters, and in Class D audio.

The EPC2306 GaN FET offers a RDS(on) of 3.8 milliohms, together with small QG, QGD, and QOSS parameters for low conduction and switching losses.

The device features a thermally enhanced QFN package with exposed top and footprint of 3 by 5 millimeters for high-power-density applications.

The EPC2306 is footprint-compatible with the previously released 100-volt, 1.8 milliohms EPC2302. The two footprint-compatible devices enable designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same footprint on a printed circuit card.

For more information contact EPC online at https://epc-co.com/epc.