High-voltage transistors for high-reliability industrial power electronics uses introduced by Infineon
MUNICH – Infineon Technologies AG in Munich is introducing the CoolGaN 650 V G5 family of high-voltage transistors for industrial applications in USB-C adapters, chargers, and renewable energy.
The CoolGaN discrete transistors are designed as drop-in replacements for the CoolGaN Transistors 600 V G1, enabling rapid redesign of existing platforms.
Compared to key competitors and previous power electronics product families from Infineon, the CoolGaN Transistors 650 V G5 offer as much as 50 percent lower energy stored in the output capacitance, as much as 60 percent improved drain-source charge, and as much as 60 percent lower gate charge.
Combined, these features result in efficiencies in hard- and soft-switching applications. The devices operate at high frequencies with minimal power loss to improve power density. The CoolGaN Transistors 650 V G5 enable SMPS applications to be smaller and lighter or to increase the output power range in a given form factor.
The high-voltage transistor family offers a range of R DS(on) package combinations. Ten R DS(on) classes are available in SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL, and TOLT.
For more information contact Infineon Technologies online at www.infineon.com/cms/en/product/power/gan-hemt-gallium-nitride-transistor.
