Rugged gallium nitride (GaN) power amplifier modules for electronic warfare (EW) introduced by Comtech PST
MELVILLE, N.Y. – Comtech PST Corp. in Melville, N.Y., is introducing the model BHED2719-200 solid state RF power amplifier modules for communications, electronic warfare (EW), and radar transmitters where space, cooling, and power are limited.
These gallium nitride (GaN)-based RF power amplifiers offer increased RF power density and improved overall operating efficiency, and are for infantry, land vehicles, fixed land sites, surface ships, and aircraft.
Features include ultra wideband operation; rugged and reliable; multi modulation input; class AB linear; ALC loop; and optional sample ports.
Performance specifications include frequency range of 20 to 1000 MHz; typical RF power out of 200 Watts; RF input of 0 decibel-milliwatts, or typically 3 decibels; maximum RF input overdrive of 8 decibel-milliwatts; AB linear class of operation; multitone CW, AM, FM, and SSB pulse modulation format; voltage standing wave ration (VSWR) of 2.0:1 with 0.5 decibels turndown, or 3:0:1 and higher with appropriate turndown; typical harmonic rejection of less than 15 decibels power ratio to carrier signal; spurious of less than 60 decibels power ratio to carrier signal; and maximum AM distortion of 10 percent.
The RF power amplifier modules offer a noise quieting speed of 10 microseconds; RS-422 control interface; power on local indicator of thermal fault ; internal protection of load VSWR; primary power of 110/220 volts AC; female N type RF input and output connectors.
The amplifiers operate in temperatures from -10 to 50 degrees Celsius; at altitudes as high as 10,000 feet; have shock and vibration resistance per MIL-STD-810G; are 5.25 inches high; and weigh 90 pounds.
For more information contact Comtech PST online at https://comtechpst.com.
