Qorvo Inc. in Greensboro, N.C., is introducing the QPM2637 and QPM1002 gallium nitride (GaN) X-band front-end modules (FEMs) for next-generation active electronically scanned array (AESA) radar and similar RF and microwave applications. These export-compliant GaN products also meet the need for high-power RF survivability, which is essential for mission-critical operations. The Qorvo FEMs are built on the company’s GaN technology, which enables higher efficiency, reliability, power and survivability, as well as savings in size, weight and cost. The GaN FEMs provide four functions in one compact package, including an RF switch, power amplifier, low noise amplifier and limiter. They can withstand as much as 4 Watts of input power on the receive side without permanent damage, compared with a typical gallium arsenide (GaAs) low noise amplifier, which can be damaged by less than 100 milliwatts of input power. The market for RF GaN devices for defense applications such as radar, electronic warfare and communications is projected to grow at a 24-percent combined annual growth rate over the next five years, as the adoption rate of GaN significantly outpaces other technology choices. For more information contact Qorvo online at www.qorvo.com.
